Vishay Releases Industry’s First 30-V Monolithic Power MOSFET and Schottky Diode With Double-Sided Cooling

New SkyFET® Device Offers Low On-Resistance Down to 0.0024 Ω and 30-nC Qrr in Encapsulated PolarPAK® Package That Can Handle Currents 50 % Higher than the SO-8

MALVERN, PENNSYLVANIA — Sept. 24, 2008 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced the release of the industry’s first 30-V monolithic power MOSFET and Schottky diode to be offered in a package with top and bottom heat dissipation paths for top performance in systems with forced air cooling. Offered in the PolarPAK® package with double sided cooling, the new SkyFET® SiE726DF device offers increased efficiency for high-current and high-frequency applications.

Optimized for the low-side control switch in synchronous rectification for high-current dc-to-dc converters, VRM applications, graphics cards, and point-of-load in servers and telecom systems, the new SiE726DF offers exceptionally low on-resistance of 0.0024 Ω maximum at a 10-V gate drive (0.0033 Ω maximum at 4.5 V), and can handle current levels 50 % higher than the SO-8 in the same footprint size, without a heatsink. The device provides a typical gate charge of 50 nC, with a low Q_gd/Q_gs ratio to help prevent shoot-through.

With a Q_rr of 30 nC and V_SD of 0.37 V — both of which are more than 50 % lower than that of a standard MOSFET — the SiE726DF integrated MOSFET and Schottky diode increases efficiency due to less parasitics and reduced power losses linked to the body diode of the MOSFET. As switching frequencies increase, the reduction in power loss becomes even more dramatic. In addition, the elimination of the external Schottky diode allows designers to create smaller, more compact circuit designs while reducing costs.

The double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature with a thermal resistance of 1 °C/W top and 1 °C/W bottom. Its leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout regardless of die size for easier PCB design, and is 100 % Rg and UIS tested.

Samples and production quantities of the SiE726DF are available now, with lead times of 10 to 12 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.

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