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Schottky Barrier Diodes
Schottky diodes are used where their low forward voltage, low capacitance and their very fast switching is a must. While standard silicon diodes have high losses due to their higher forward voltage the use of Schottky diodes helps to reduce the losses significantly.

First Schottky Diodels in Square Leadless MELF Packages
Vishay Semiconductors, with 30 years experience in glass package technology, is the industry's first supplier who offers Schottky diodes in QuadroMELF and MicroMELF packages. Due to their square x-section, handling and placing performance with conventional pick-and-place equipment is easier than of traditional round diodes. So customers can use their standard manufacturing tools. Due to a better picking-up technique (vacuum), the pick-and-place procedure is 20 to 40% faster than with round diodes. Standard DO35 and SOD80 MiniMELF packages are of course also available.

MicroMELF -- The Smallest Glass Package Worldwide
The new MicroMELF, with dimensions as small as 2 mm x 1.25 mm x 1.25 mm the smallest glass package available on the market, offers an excellent solution to meet the requirements in surface-mount technologies towards smaller components and higher packaging density. The outline is the same as the industry standard '0805'. Therefore, the MicroMELF requires the same solder pads and the proven design rules for placing and soldering. Additionally, the MicroMELF is a cost-effective drop-in replacement for SOD110 and SOD323

Features
Very fast switching
Low forward voltage
Low capacitance

Applications
Signal rectifier in RF circuits
Signal switching in telecommunication
Switching of redundant batteries
Small rectifier with small power losses
Small DC/DC converter
Small low-voltage power supplies
Protection circuits
Voltage clamping

Packages Type Designation
DO35 BAT81S BAT82S BAT83S BAT85S BAT86S
SOD80 MiniMELF BAS81 BAS82 BAS83 BAS85 BAS86
SOD80 QuadroMELF BAS281 BAS282 BAS283 BAS285 BAS286
MicroMELF BAS381 BAS382 BAS383 BAS385 BAS386
Electrical Characteristics @ Tamb=25°C
VR max 40 V 50 V 60 V 30 V 50 V
IF max 30 mA 30 mA 30 mA 200 mA 200 mA
IFRM ( tp<=1s, d<=0.5 ) 150 mA 150 mA 150 mA 300 mA 300 mA
IFSM ( tp<=10 ms ) 500 mA 500 mA 500 mA 5 A 5 A
VF max @ IF = 0.1mA BAT81S BAT82S BAT83S BAT85S BAT86S
VF max @ IF = 1mA 330 mV 330 mV 330 mV 240 mV 300 mV
VF max @ IF = 10mA 410 mV 410 mV 410 mV 320 mV 380 mV
IF @ VR = VR max       400 mV 450 mV
IF @ VR = 25V 200 nA 200 nA 200 nA    
IF @ VR = 40V       2 mA  
CD @ f = 1 MHz, VR = 1 V         5 mA
IF @ VR = 40V 1.6 pF 1.6 pF 1.6 pF 10 pF 8 pF
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