The News:

Vishay's New SiP41111 75 V, 2 A Half-Bridge MOSFET Driver Vishay Intertechnology, Inc. (NYSE: VSH) announces a high-frequency 75 V half-bridge n-channel MOSFET driver IC that delivers a 2 A peak sink and source gate driver current.

• Drives n-channel MOSFET half-bridge topology
• Fast propagation times meet requirements of high-frequency converter circuits
• Drives a 1,000 pF load with typical rise and fall times of 15 ns to meet 400 kHz typical switching requirements
• Independent driver channel for two switch forward and active clamp forward topologies
• Low power consumption
• Power supply undervoltage lockout

The Key Benefits:

• Features a maximum bootstrap supply voltage up to 75 V for high-voltage applications
• Delivers a 2.0 A peak sink and source gate driver current
• 6.5-ns delay match and high-low match times enable the fast propagation times required for 400 kHz applications
• Reduces external component count with on-chip bootstrap diode
• Undervoltage protection takes the outputs low in the event of an undervoltage condition, after which the device turns on again automatically
• Offered in SOIC-8 and thermally enhanced PowerPAK^® SOIC packages

The Key Applications:

• High-voltage buck converters, full- and half-bridge converters, active clamp forward converters, and power supplies
• Motor control
• Class D audio systems
• Power conversion for high-intensity discharge lamps in automobiles

The Device Specifications:

• Supply voltage range from 9 V to 13.2 V
• Bootstrap supply voltage up to 75 V
• 2.0 A peak sink and source current
• Operating temperature range of -40 to 85 °C
• Offered in SOIC-8 and SOIC-8 PowerPAK packages
• 15 ns typical rise and fall times

The Perspective:

Vishay's new SiP41111 75 V half-bridge n-channel MOSFET drivers deliver a 2.0 A peak sink and source gate driver current for high-voltage applications.

Availability:

Samples and production quantities of the SiP41111 MOSFET drivers are available now, with lead times of 8 to 10 weeks for larger orders.